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Fujitsu's GaN HEMT ups power amplifier performance

Posted: 08 Oct 2010     Print Version  Bookmark and Share

Keywords:electron mobility transistor  gallium nitride  GAN  power amplifier 

Fujitsu's use of gallium nitride high electron mobility transistors in power amplifier claims high 1.3W output performance.

The GaN HEMT-based power amplifier is targeted at wireless communications in the millimeter-wave W-band(3), claiming it future-proof. Its transmission output is 16x that of existing amplifiers using gallium arsenide (GaAs), extending W-band transmission ranges about six times.

Fujitsu said the power amplifier is ideal for high-capacity wireless communications in remote or inaccessible locations, as well as in rain and other extreme weather conditions.

Fujitsu's previous record was 350mW of power using power amplifiers with GaN HEMTs. To create the 1.3W power amplifier, it had to optimise the GaN HEMT passivation layer and build a power division and combination model through electromagnetic analysis.

More work needs to be done to improve performance and widen the frequency spectrum but Fujitsu is already planning to use the technology is a diverse range of applications such as millimeter-wave-enabled trunk lines and ultra-high-speed wireless network access.

Fujitsu Ltd and Fujitsu Laboratories Ltd presented their research findings at the 2010 IEEE Compound Semiconductor IC Symposium in Monterey, California. The research was conducted for Japan's Ministry of Internal Affairs and Communications under its Research and Development Project for Expansion of Radio Spectrum Resources.





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