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RF power transistors: comparative study of LDMOS vs. bipolar technology

Posted: 29 Mar 2010     Print Version  Bookmark and Share

Keywords:power transistors  LDMOS vs. bipolar  RF power transistors 

RF power transistors consist of two type of devices: bipolar junction (BJT) and field effect (FET). Due to differences in technology, the bipolar junction transistor yields superior performance for certain applications, while the field effect transistor is better employed for others. This application note discusses and compares their parameters and performances.

View the PDF document for more information.





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