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How to migrate from S29GL128P to M29W128GH/L flash memories

Posted: 26 Feb 2010     Print Version  Bookmark and Share

Keywords:flash memory migration  S29GL128P migration  W128GH/L flash 

This application note aims to explain how to migrate an application based on the S29GL128P flash memory to an M29W128GH/L flash memory. The purpose of this document is not to provide detailed information on the devices, but to highlight the similarities and differences between them. The comparison takes into consideration the signal descriptions, packages, architecture, software command set, performance, and block protections.

The S29GL128P and M29W128GH/L are 128Mbit (8Mbit x 16 or 16Mbit x 8) flash memories that can be read, erased and reprogrammed using a single low supply voltage.

Both memories are divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Program and erase commands are written to the command interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.

Group of blocks can be protected to prevent accidental program or erase commands from modifying the memory. On both devices, the highest or lowest memory block can also be protected by using a hardware method.

All devices have an extra block, the extended block, of 128 words (256bytes). It can be accessed using a dedicated command. The extended block can be protected and so is useful for storing security information. However the protection is not reversible, once protected the protection cannot be undone.

In this document, the S29GL128P, highest and lowest block protected (01 and 02 model), will be referred to as S29GL128P, and the M29W128GH (highest block protected) and the M29W128GL (lowest block protected) will be referred to as M29W128G unless otherwise specified.

View the PDF document for more information.

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