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ST taps Applied Materials HKMG tech

Posted: 11 Dec 2009     Print Version  Bookmark and Share

Keywords:high-k/metal gate  HKMG  28nm production 

Applied Materials Inc. said that its high-k metal gate (HKMG) technology has been selected by STMicroelectronics for the production of 28nm logic devices. Applied's HKMG technology will be used to manufacture the transistor gate layers in ST's SoC devices at its fab in Crolles, France.

HKMG is an emerging technology that allows the continuation of Moore's Law, enabling faster switching speed while reducing device power consumption. Replacing traditional silicon dioxide as the main gate dielectric, the new HKMG structure integrates a hafnium-based high-k material with a new metal gate electrode to increase capacitance and control leakage current.

"We are impressed and extremely pleased with the speed at which Applied has developed integrated HKMG solutions that address our 28nm device requirements," said Joël Hartmann, silicon technology development director for ST. "We are confident that through our continued collaboration with Applied Materials we can quickly bring our 28nm HKMG solution into volume production."

Major challenges to implementing HKMG technology for the industry have been the development of manufacturable processes using new materials that can provide optimum transistor characteristics while maintaining the integrity of the dielectric stack. Applied has developed a multi-step process combining its leading-edge technologies to provide ST with a robust and reliable HKMG solution.

"This important collaboration with ST demonstrates that our HKMG solution can be successfully integrated in their logic devices with superior performance," said Steve Ghanayem, corporate VP and general manager of Applied's front end and metal deposition products business unit. "ST's selection of our HKMG processes is a strong testament to the work we've done to provide production-worthy solutions for this challenging new transistor technology."





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