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MOSFET, Schottky diode packed in super thin chip

Posted: 24 Nov 2009     Print Version  Bookmark and Share

Keywords:MOSFET  Schottky diode  MicroFET package 

FDFMA2P859T MOSFET

Fairchild Semiconductor has integrated a p-channel PowerTrench MOSFET and Schottky diode into a single-package solution. The MicroFET thin package helps designers avoid compromising their designs by providing them with a low profile device that meets critical efficiency and thermal needs in battery-charging and power-multiplexing applications.

The FDFMA2P859T provides excellent power dissipation and conduction loss characteristics, compared to conventional MOSFETs, all while providing a 30 per cent height reduction over the industry-standard 0.8mm MicroFET package. With a 0.55mm package height, this device is ideal for low-profile designs, such as those common in the latest portable and wearable cell phones, media players and medical devices.

The customer's design requirements for the FDFMA2P859T was for the device to provide exceptional thermal performance for its physical size, and to ensure a very low reverse leakage current of 1µA at Vr=10V, for the Schottky diode. These attributes are important in improving performance and efficiency in linear mode battery charging and power-multiplexing applications.

The FDFMA2P859T is part of Fairchild's MOSFET portfolio. They are priced at Rs.19.04 ($ 0.39) each for orders of 1,000 pieces. Samples are available now.





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