Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > RF/Microwave

LDMOS RF power transistors speed development

Posted: 31 Aug 2009     Print Version  Bookmark and Share

Keywords:LDMOS  RF power transistor  amplifier  TD-SCDMA 

Freescale Semiconductor has unveiled two final-stage LDMOS RF power transistors that offer designers a choice between discrete and IC solutions. Together with two reference designs, the device provides flexibility and speeds time to market. The transistors are optimised for use in power amplifiers based on TD-SCDMA.

The MRF7P20040H LDMOS FET and the MD7IC2050N multi-stage integrated power amplifier IC are accompanied by two reference designs based on Doherty architecture to speed manufacturers' ability to create compact, cost-effective, high performance base station transceiver products for TD-SCDMA networks.

"Freescale continues its leadership in LDMOS RF technology by offering high performance solutions for customers using TD-SCDMA wireless technology in China," said Gavin Woods, VP and general manager of Freescale's RF division. "Freescale is applying its knowledge and leadership in RF power technology to support the specific requirements of TD-SCDMA as the technology is rapidly deployed throughout China."

Design flexibility
Freescale's latest RF LDMOS devices make it possible to build RF power amplifiers that are optimally suited to a chosen design. The designer can select a discrete, three-stage PA configuration with the MRF7P20040H as the final amplifier, or the MD7IC2050N IC (which includes the driver and final amplifier stages) in a two-stage PA configuration. Both devices are extremely well suited for use in Doherty amplifiers, which are universally employed in today's base station transceivers. A Doherty amplifier consists of two amplifiers that operate under different transmit-signal conditions and typically require separate transistors for each amplifier.

However, Freescale's MRF7P20040H and MD7IC2050N support a dual-path configuration, which allows a Doherty amplifier to be constructed using a single device rather than two for the final-stage amplifier. In addition, since both devices are inherently broadband, they can operate in both bands allocated for TD-SCDMA (1,880-1,920MHz and 2,010-2,025MHz), so the same device can be used to provide RF power in both bands. Together, these advantages can significantly reduce a TD-SCDMA amplifier's size, BOM and circuit complexity, while also simplifying inventory management.

1 • 2 Next Page Last Page

Comment on "LDMOS RF power transistors speed dev..."
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top