Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > Memory/Storage

TSMC moves to 28nm with SRAM cell

Posted: 19 Jun 2009     Print Version  Bookmark and Share

Keywords:28nm node  64-Mbit SRAM  high-k/metal-gate 

Silicon foundry giant Taiwan Semiconductor Manufacturing Co. Ltd has taken a slight lead in the 28nm process race.

TSMC claims it has developed the first functional 64-Mbit SRAM cell, based on its 28nm technology. This development was presented in a paper at the 2009 Symposia on VLSI Technology and Circuits in Japan.

TSMC recently announced the 28nm process, which allows an option for silicon dioxide or a high-k/metal-gate scheme for the gate stack.

The paper does not appear to discuss high-k. Instead, the paper outlines a low-power technology that extends silicon oxynitride (SiON)/poly usage beyond 32nm with a dual/triple gate oxide process.

Other characteristics from this technology includes 6-T SRAM cells, low leakage transistors, conventional analogue/RF/electrical fuse components, copper interconnects and low-k.

The paper also reports a 64-Mbit SRAM with a cell size of 0.127-um2, and a raw gate density as high as 3900 kGate/mm2 in this 28-nm dual/triple gate oxide SoC technology. In the paper presented, low standby and low operating power transistors using SiON optimised with strain engineering and oxide thickness provide up to 25-to-40 per cent speed improvement or 30-to-50 per cent active power reduction over prior 45nm technology, according to TSMC.

''This development was achieved through close collaboration with customers who are pushing their own boundaries of new applications requiring 28nm technology," said Jack Sun, vice president R&D at TSMC,'' in a statement.

In the previous announcement made in September 2008, TSMC plans to deliver its 28nm process in early 2010.

Amid one of the toughest periods in its illustrious history, TSMC remains cautiously optimistic about the IC industry and vowed that it will continue to invest in R&D despite the downturn. And it is also planning to move the IC-equipment in its R&D fab for the 22nm node.

Racing for 28nm crown
Other foundries are also chasing after the 28nm node. Paving the way for its upcoming 28-nm process, Taiwan foundry provider United Microelectronics Corp. (UMC) of Taiwan last year said that it has manufactured functional 28nm SRAM chips. The technology also supports both high-k/metal-gates and silicon dioxide.

IBM Corp.'s ''fab club'' claims to be on track to introduce high-k/metal-gate technology ahead of all other foundries at the 32nm node. As reported, it expects to be ready to accept 32nm designs in the second half of 2009, with the ability to ramp production in first half of 2010.

In April, IBM's ''fab club'' has officially rolled out its 28nm process based on high-k dielectrics and metal gates. Early ''risk production'' for the 28nm technology is anticipated in the second half of 2010.

At the 2009 Symposium on VLSI Technology in Kyoto, Japan, GlobalFoundries Inc. claims that it has found a technique that enables a high-k/metal-gate transistor to scale to the 22-nm node and beyond. That company is part of the ''fab club.''

-Mark LaPedus
EE Times

Comment on "TSMC moves to 28nm with SRAM cell"
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top