Global Sources
EE Times-India
Stay in touch with EE Times India
 
EE Times-India > Memory/Storage
 
 
Memory/Storage  

Report: ITRI to end phase-change memory work

Posted: 09 Jun 2009     Print Version  Bookmark and Share

Keywords:non-volatile memory  phase-change memory  memory chips  RRAM 

According to a report in MacWorld, the Industrial Technology Research Institute has started investigating Resistive-RAM (RRAM) as a universal non-volatile memory and plans to end its work on phase-change memory.

ITRI, which is funded by the Taiwan government, has been working on phase-change memory for sometime but has found memory chips based on the technology difficult to manufacture, according to the report. The research group plans to finish off some phase-change related research projects during the rest of 2008 and then phase the topic out, the report said.

ITRI defines RRAM as a nonvolatile memory based on resistance switching caused by internal stoichiometry changes in compound materials. The researchers state they have successfully operated low-power RRAM, based on transition metal oxide and compatible electrode metals, at less than less than 3-volts. ITRI has quoted endurance of ten years at 85°C and more than a milliom. ITRI also claims to have demonstrated multi-level cell programming of four distinct states reflecting two bits per cell.

-Peter Clarke
EE Times Europe





Comment on "Report: ITRI to end phase-change mem..."
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
 
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

 

Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

 
Back to Top