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Firms start production of 34nm NAND flash

Posted: 26 Nov 2008     Print Version  Bookmark and Share

Keywords:multi-level cell  NAND flash  joint venture  process technology 

Intel Corp. and Micron Technology Inc. have started volume production of their jointly developed 34nm, 32Gbit multi-level cell (MLC) NAND flash memory devices.

Developed and manufactured by the companies' NAND flash joint venture, IM Flash Technologies (IMFT), the process technology is claimed to be the most advanced process available on the market and enables the industry's only monolithic 32Gbit NAND chip that fits into a standard 48-lead thin small-outline package (TSOP). The companies are ahead of schedule with 34nm NAND production, expecting their Lehi facility to have transitioned more than 50 per cent of its capacity to 34nm by year's end.

The 34nm, 32 Gbit chips are manufactured on 300mm wafers. Measuring just 172mm², less than the size of a thumbnail, the chip will cost-effectively enable high-density solid-state storage in small form factor applications including digital cameras, personal music players and digital camcorders, claim the company. Additionally, the chip will enable more cost-effective solid-state drives, dramatically increasing their current storage capacity.

The companies also plan to begin sampling lower density MLC and single-level cell (SLC) products using the 34nm process technology early next year.

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