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Power MOSFET offers lowest on-resistance

Posted: 21 Nov 2008     Print Version  Bookmark and Share

Keywords:power MOSFETs  gate charge  on-resistance 

SiR440DP

Vishay Intertechnology, Inc. has expanded its family of Gen III TrenchFET power MOSFETs with the announcement of a new 20-V n-channel device offering what it claims as the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK SO-8 package type.

The SiR440DP features a maximum on-resistance of 2.0mΩ at a 4.5-V gate drive and 1.55mΩ at a 10-V gate drive. On-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in dc-to-dc converter applications, is 87 at 4.5V. Compared to the closest competing devices optimised for low conduction losses and low switching losses, these specifications represent an improvement for on-resistance of 23% at 4.5V and 22.5% at 10V, and a 27% lower FOM. Lower on-resistance and gate charge translate into lower conduction and switching losses.

The Vishay Siliconix SiR440DP will be used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications. Its low conduction and switching losses will enable more power-efficient and space-efficient designs for voltage regulator modules (VRMs), servers, and a wide range of systems using point-of-load (POL) power conversion.

Vishay has also released the new 20-V SiR866DP and SiR890DP n-channel power MOSFETs. Respectively, the devices offer on-resistance at 4.5V of 2.5mΩ and 4mΩ, on resistance at 10V of 1.9mΩ and 2.9mΩ, with typical gate charges of 35.3nC and 20nC. All three new power MOSFETs are offered in the PowerPAK SO-8 package type. The devices are lead (Pb)-free, halogen-free, and RoHS-compliant, meeting the demands of international legislation for elimination of hazardous substances.

Samples and production quantities of the SiR440DP, SiR866DP, and SiR890DP are available now, with lead times of 10 to 12 weeks for large orders.





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