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MOSFETs achieve low on-state resistance

Posted: 29 Aug 2008     Print Version  Bookmark and Share

Keywords:MOSFET  DC-DC converter  UMOS V-H process  drain-source voltage 

 Toshiba MOSFETs

Toshiba America Electronic Components Inc. (TAEC) has expanded its synchronous DC-DC converter line-up with five new power MOSFETs targeted for use in mobile and desktop computers, servers, game consoles and other electronic devices to convert input voltage to the level required for various sub-systems, such as the processor, memory and input-output devices. The new devices take advantage of improvements for N-channel devices in the company's fifth-generation UMOS V-H process to achieve low on-state resistance (RDS(ON)) as well as fast switching for high-side MOSFET applications, enabled through lower gate charge (QSW) and lower gate resistance (Rg).

The first new device is the TPCM8004, which features drain-source voltage (VDSS) of 30V (max.), drain current (ID) of 24A (max.), RDS(ON) of 11mΩ(max.), low gate resistance of 1Ω (typ.) and a compact, low profile TSSOP Advance package from Toshiba measuring 3.5mm x 4.65mm x 0.75mm.

The Toshiba TPCA8030-H and TPCA8031-H MOSFETs are targeted for use as high-side DC-DC converter MOSFETs with VDSS of 30V (max.), ID of 24A (max.), and RDS(ON) of only 11.0mΩ1 (max.). The TPCA8030-H has typical gate resistance of 1Ω, while the TPCA8031-H has typical gate resistance rated at 3.4Ω. Both devices are available in low profile SOP Advance packaging from Toshiba, which measures 5mm x 6mm x 0.95mm.

The Toshiba TPC8037-H and TPC8038-H MOSFETs are high-side MOSFETs with VDSS of 30V (max.), ID of 12A (max.), and RDS(ON) of only 11.4mΩ1 (max.). The TPC8037-H has typical gate resistance of 1?, while the TPC8038-H has typical gate resistance rated at 3.4Ω. Both devices are available in SOP 8 packaging, which measures 5mm x 6mm x 1.6mm.

Samples of the five new Toshiba UMOS V-H DC-DC converter MOSFETs are available now, with prices in sample quantities starting at Rs.22.29 ($0.52).

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