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High-voltage HBT devices reduce system costs

Posted: 24 Jun 2008     Print Version  Bookmark and Share

Keywords:heterojunction bipolar transistor  amplifier efficiency  high-power amplifier  base-station radio 

TriQuint Semiconductor has released two HV-HBT (high-voltage heterojunction bipolar transistor) aimed at 3G/4G mobile infrastructure applications. The devices tout greater amplifier efficiency, which can lower initial base station costs, lower power consumption and lower operating costs, TriQuint said. When paired with TriQuint's high-power HBT devices, the AP631 and AP632 provide a complete RF solution for 3G/4G high-power amplifier (HPA) mobile infrastructure designs.

A typical RF section in a base-station radio is made up of three areas known as the pre-driver, driver and output stages. The relatively low-power AP631 and AP632 HBT devices are well-suited as pre-drivers and drivers.

The new HV-HBT devices unveiled at the IEEE IMS MTT-S Convention and Exhibition in Atlanta, Georgia, integrate two stages into a single package. This allows designers to reduce the number of discrete amplifier components in a system. When used in a typical base-station HPA design, a 25percent reduction and a PCB area savings of 12 square centimeters can be achieved compared to designs using two separate discrete amplifier stages, according to TriQuint.

The amplifiers' high linearity minimises additional signal distortion for repeater applications when used in final amplifier stages, and reduces backoff power requirements to minimise distortion from high peak to average ratio (PAR) signals in 3G/4G mobile base stations. This translates into reduced overall system costs and improved efficiency, which can lower HPA power consumption and improve OpEx (operational expenditures) for multi-carrier 3G mobile infrastructures.

Gina Roos

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