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Power MOSFET features tiny footprint

Posted: 20 Jun 2008     Print Version  Bookmark and Share

Keywords:power MOSFET  MICRO FOOT  footprint  on-resistance 

Vishay Intertechnology, Inc. debuts a new 20-V p-channel TrenchFET power MOSFET in a MICRO FOOT chipscale package that features what is said to be the industry's smallest footprint and on-resistance ratings down to 1.2V.


As portable electronics become more compact, and their functionality increases, the available board space for power management circuitry decreases significantly. To meet consumer expectations for battery run times between charges, the new Vishay Siliconix Si8445DB provides low power consumption to produce smaller MOSFET packages that designers require.

With an ultra-compact 1.2-mm by 1.0-mm footprint, the Si8445DB is 20 per cent smaller than the industry's next-smallest device, while offering the same slim 0.59-mm profile. The Si8445DB offers a low on-resistance range from 0.495Ω at 1.2-V VGS to 0.084 at 4.5-V VGS. The low on-resistance rating at 1.2V reduces the need for level shift circuitry, thus saving space and power in portable electronics designs.

Typical applications for the new device will include low-threshold load switching, charger switching, and battery management in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones.

Samples and production quantities of the new MICRO FOOT chipscale power MOSFET are available now, with lead times of 10 to 12 weeks for larger orders.

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