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High-frequency power MOSFETs serve wireless handhelds

Posted: 02 Jun 2008     Print Version  Bookmark and Share

Keywords:MOSFET  ESD  transmitter power amplifier 

The RQA0010 and RQA0014 high-frequency power MOSFETs from Renesas Technology Corp. achieve the industry's highest efficiency class and the high reliability of ESD immunity level 4, according to the company.

The devices are designed for use in the transmitter power amplifier in handheld wireless equipment.

According to the company, the two products amplify the audio signals converted to high frequency for transmission to a stipulated output level and transmit that power to the antenna. Sample shipment of the 1W RQA0010 will begin in August and sample shipment of the 0.25W output RQA0014 will begin in September.

Meanwhile, by adopting a new fabrication process, Renesas claims it achieved the industry's highest efficiency class with a 60 per cent power added efficiency in the RQA0010 at 3.6V and 55 per cent in the RQA0014. In particular, when a two-stage amplifier is implemented with these two products (a structure in which the output amplitude provided by an RQA0014 is amplified by an RQA0010), the circuit achieves the industry's highest level of performance: a 1.2W output at 3.6V.

The achievement on the other hand of the ESD immunity level 4 was the result of Renesas analysing the mechanism by which ESD causes damage and optimised the device structure in the places where damage occurs. As a result, the devices, says Renesas, maintain their high-efficiency characteristics at 20kV and over and achieve ESD immunity level 4. This supports high reliability in wireless equipment.

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