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FET RF PA target radar, avionics apps

Posted: 05 May 2008     Print Version  Bookmark and Share

Keywords:HVVFET  L-band avionics  pulsed-radar application  silicon power transistor  DMOS 

Newcomer HVVi Semiconductors has introduced the high-voltage vertical field effect transistor (HVVFET), a family of silicon power transistors targeted at L-band avionics and pulsed-radar applications such as IFF, TCAS, TACAN, Mode-S and ground-based radar systems.

Based on DMOS and LDMOS lateral structures, HWET has a vertical structure, which allow heat to be extracted from the hottest spot of the device and flow directly to the heatsink.

This allows the single-supply, 24 to 48-V power amplifiers (PA) to offer twice the power density of competitive devices along with a 30% efficiency improvement, operating ruggedness with 20:1 VSWR load mismatch (twice that of comparable devices), and 3 dB more gain than available devices.

The greater efficiency also yields a much smaller footprint, or the ability to use a single device in place of multiple amplifier stages. The VSWR tolerance reduces or eliminates the need, and thus the cost and board space, for isolators and circulators common in these applications, while the 48-V operation supports reduced current and thus higher-efficiency, higher-reliability operation.

Bill Schweber

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