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Micron touts 'fastest' 512Mbit mobile DRAM

Posted: 14 Feb 2008     Print Version  Bookmark and Share

Keywords:fastest Mobile DRAM  NAND flash 

512Mbit Mobile DRAM

Micron Technology Inc. has started sampling to customers and major enablers what it claims as the industry's fastest 512Mbit Mobile DRAM, designed for the latest feature-rich mobile electronic devices. Mass production is slated in Q2.

With mobile applications adding increased computing and multimedia functionality, faster and better performing memory becomes paramount for optimising performance.

Micron's 512Mbit Mobile DRAM addresses the needs of today's most advanced mobile devices by delivering maximum clock speeds of up to 200MHz, allowing data transfer at 400Mbit/s rates. According to Micron, this industry-leading speed provides the additional bandwidth necessary to boost the operating capability of mobile applications, including running more functions simultaneously without performance issues or powering high speed video.

"The trend of full-featured mobile products that offer more audio, video and computing functionality only continues to grow, creating an increased demand for memory products that can support these advanced capabilities," said Bill Lauer, senior director of marketing for Micron's memory group. "With its speed, small form factor and reduced power consumption, Micron's 512Mbit Mobile DRAM is ideal for meeting the requirements of today's handheld products."

In addition to meeting the JEDEC standard 1.8V I/O, the device is also available with a 1.2V I/O option that improves signaling for high-speed, high-bandwidth operation and is a key design requirement for next generation mobile chipsets. It also offers an extended operating temperature range from -40°C to 85°C, making it optimal for products performing in extreme conditions. The company plans to assemble the 512Mbit Mobile DRAM with NAND flash and Managed NAND parts, and also intends to offer it in a multichip package or a package-on-package stack.

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