RF power transistors for broadcast, ISM market debut

Freescale Semiconductor has expanded its portfolio of 50V LDMOS RF power transistors with three devices that promise better efficiency, gain and thermal resistance when compared to competing bipolar and MOSFET devices.

The devices are said to deliver performance levels that can help systems designers create ultrahigh-resolution MRI machines and smaller and more powerful broadcast equipment. They also can also help reduce part counts by 70 per cent for pulsed systems such as advanced weather radars and high power industrial lasers, the company said.

Delivering peak RF output power of 1kW, the MRF6VP21KH and MRF6VP41KH devices are intended for broadcast, public safety and pulsed applications. The MRF6VP2600H device delivers peak RF output power of 600W continuous wave (CW) and is intended for industrial, scientific and broadcast applications.

The new devices are based on Freescale's sixth-generation, high-voltage (VHV6) 50V LDMOS technology, which is claimed to be the first 50V LDMOS technology introduced for broadcast, industrial, scientific and medical markets.

Two of the devices are optimal for pulsed operation and the third can be used for both CW and pulsed operation. All three devices are designed in air-cavity packaging and are RoHS-compliant. Available in a bolt down option, the MRF6VP41KHS is also the first RF power transistor at this power level to be available in a push-pull solder down mounting optimised package (the NI-1230S). The push-pull solder down mounting option presents a smaller footprint than traditional air-cavity packages and combines low manufacturing cost and high reliability. The package is RoHS-compliant and is also compatible for use with lead-based solder.

The MRF6VP21KH, MRF6VP41KH, and MRF6VP2600H are sampling today and full production is expected in December. Reference text fixtures are available for all three devices. Large-signal models are expected to be available for the devices in early 2008.