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TSMC's 0.13µ embedded flash process begins

Posted: 23 Aug 2007     Print Version  Bookmark and Share

Keywords:3� embedded flash process  non-volatile memory  flash memory 

Taiwan Semiconductor Manufacturing Co. Ltd has qualified its 0.13µ embedded flash process and has entered production.

The 0.13µ embedded flash process employs the same split-gate flash cell as the previous generation, enabling easy migration. It is fully compatible with TSMC's logic baseline of 0.13µ general-purpose process and low power process. Such compatibility ensures that customers get the best out of their investment in libraries and silicon intellectual property. This is particularly beneficial when a customer is interested in new product development with embedded flash function or strengthening cost performance of an existing product by having flash memory embedded.

"Technology savvy factors in our smooth introduction of copper wiring into the embedded flash process. The production launch signatures another milestone achieved in our history of non-volatile memory technology development," said Sam Chen, director of memory platform marketing at TSMC. "The process's low power transistor makes it ideal for ZigBee/Wibree devices, wireless headsets, hearing aids, SmartCards and other applications requiring ultra low power consumption ranging from 1.2V to 1.5V."

Customers have expressed their concern over substantial costs associated with embedded flash IP testing. TSMC has tackled the issue with a "design for test" module that maximises the numbers of die tested in one single test. Designers can choose either Multiplexing or a Serial scheme depending on their need for ease of implementation or low pin count.

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