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ISSI unveils 5V, 4Mbit asynchronous SRAMs

Posted: 16 Aug 2007     Print Version  Bookmark and Share

Keywords:CMOS technology; circuit design techniques 

ISSI.5V

Integrated Silicon Solution, Inc has announced a line of 5V, 4Mbit asynchronous SRAMs. This new offering includes devices organised as 512Kx8 and 256Kx16 with access times as fast as 10nS and standby current as low as 200nA. Fabricated using 6T cell, 0.13micron, CMOS technology, this highly reliable process coupled with innovative circuit design techniques yield high-performance and low power consumption devices.

Commercial, industrial and automotive temperature ranges are available to support a wide variety of applications in the industrial, automotive, telecom and networking markets that still require 5V operation. These devices operate from a single 5V, 10% power supply and have TTL compatible interface levels.

?The addition of these devices is part of ISSI?s commitment to long term support of memory. In addition to 1.8V, 2.5V and 3.3V SRAMs, ISSI now has a wide variety of 5V SRAMs from 256Kb to 4Mb,? said Sanjiv Asthana, ISSI's VP of sales and marketing.

For quantities of 10,000, the devices are priced at Rs.141.57 ($3.50). The 512Kx8 IS61C5128AX and IS64C5128AX (automotive) are available in 36-pin SOJ (400-mil), 32-pin sTSOP-I, 32-pin SOP, 44-pin TSOP-II and 32-pin TSOP-II JEDEC standard packages. The 256Kx16 IS61C25616X and IS64C25616X (automotive) are available in 44-pin SOJ and 44-pin TSOP-II JEDEC standard packages. These devices can be ordered as lead-free. Samples are available now, with volume production shipments beginning in September.




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