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Hynix receives validation on DDR3 memory devices

Posted: 03 May 2007     Print Version  Bookmark and Share

Keywords:Hynix DDR3 validation  DDR3 memory validation  1Gbit DDR3 SDRAM 

Hynix Semiconductor Inc. claims to have received the industry's first validation on its DDR3 memory components and modules from Intel.

The validated DDR3 products from Hynix are 1Gbit DDR3 SDRAM components manufactured on Atmel's 80nm process technology, 1GB and 2GB DDR3 Unbuffered-DIMMs. These devices boast operating speeds of 800MHz and 1066MHz at 1.5V power supply, which are touted to be the fastest in the industry today. These speeds are offered in latency combinations of 5-5-5 and 6-6-6 for 800MHz, and 7-7-7 for 1066MHz, to suit the needs of various PCs, workstations and other applications.

Aside from its high-speed characteristics, DDR3 features reduced current consumption of almost 25 per cent, compared to the present generation DDR2. The company's "three-dimensional transistor" architecture minimises current leakage to further reduce overall current consumption and ensure data integrity.

"The small form-factor package of the Hynix 1Gbit DDR3 reduces manufacturing cost and enables high density memory modules," said Kih Joong Sik, VP of DRAM Development at Hynix.

Demand for DDR3 is expected to emerge towards the end of the year. iSuppli reports that DDR3 will account for 25 per cent of total DRAM shipments by the end of 2008 and dominate the market by 2010.

Mass production of the 1Gbit DDR3 on the 80nm line will begin in the third quarter of this year. Hynix plans to manufacture the product on the new 66nm process beginning in late 2007.

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