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Power/Alternative Energy  

H-FREDFETs diodes feature 200ns recovery speed

Posted: 23 Mar 2007     Print Version  Bookmark and Share

Keywords:FREDFET  fast-recovery diodes  MOS 8  Microsemi  xx 

Microsemi Corp. launched a line of FREDFETs (H-FREDFETs) fast-recovery diodes to its latest-generation POWER MOS 8 product line. The MOS 8 H-FREDFET devices are designed for a range of 500V and 600V applications including AC/DC offline power supplies, motor drivers, server and telecom power systems, solar inverters, single- and three-phase arc welding and plasma cutting equipment, battery chargers, semiconductor capital equipment and induction heating. Medical equipment including magnetic resonant imaging (MRI) and computerised axial tomography (CT) can also benefit from this product.

Manufacturing processes for the MOS 8 products have lowered their thermal resistance and enabled higher current ratings for each die size and package type compared to earlier devices. Low capacitance and gate charge specifications enable high switching frequency capability and low switching losses. MOS 8 H-FREDFETs have all the features and advantages of MOS 8 FREDFETs, with continued low Rds(on) and a body diode recovery speed of less than or equal to 200ns. These devices provide ruggedness in applications where the body diode carries forward current, including the zero voltage switching (ZVS) bridge topologies. All MOS 8 H-FREDFET devices are 100 per cent tested for avalanche energy capability and are offered in RoHS-compliant packages.

Samples are available today. Pricing begins at Rs.148.68 ($3.37) each in 1,000-piece quantities.

- Emily Gleason
eeProductCenter




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