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Hynix touts 'fastest' 512Mbit mobile DDR SDRAM

Posted: 19 Mar 2007     Print Version  Bookmark and Share

Keywords:SDRAM  DDR  memory  NAND flash  ECC 

Hynix Semiconductor Inc. claims it has developed the industry's fastest 185MHz 512Mbit mobile DDR SDRAM with error correction code (ECC). The built-in ECC, similar to that used in NAND flash, ensures data integrity while reducing current consumption by almost 50 per cent.

1.5Gbps throughput
At 185MHz clock speed, said to be the fastest in the industry, a throughput of up to 1.5Gbps can be attained with a 32bit I/O, the company said. The ECC feature allows for the extension of the refresh interval, which significantly reduces power consumption. Additionally, the 512Mbit ECC Mobile DDR offers the low-power features, including reduced power supply voltage, temperature compensated self refresh, partial array self refresh and deep power down modes, necessary for a wide range of mobile applications.

"As handheld products such as mobile phones require higher density memory components, the current consumption of mobile DRAMs has become a very critical issue for OEMs," said Kim Yong Tark, Hynix VP of mobile division. "Hynix's ECC mobile DDR meets the system designers' need for high density, data integrity and very low power consumption that extends battery life."

80nm process tech
Hynix's 512Mbit ECC mobile DDR is manufactured on 80nm process technology and is offered in JEDEC standard pin-out and packages. The company plans to assemble the 512Mbit ECC mobile DDR with NAND flash and offer a multi-chip package or a package-on-package stack.

Mass production of the products is slated to begin 2H 2007, with samples scheduled for early Q3. Preliminary technical specification is available upon request.

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