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RF/Microwave  

2W power amps target 800MHz-1GHz-band apps

Posted: 12 Jan 2007     Print Version  Bookmark and Share

Keywords:power amplifier  GSM  RFID  M/A-COM  power amp 

RF components supplier M/A-COM is delivering its MAAP-007649-000100 2W power amplifier (PA). Slated for 800MHz to 1GHz-band applications, the MAAP-007649-000100 ensures greater than 1W Dense Reader Mode (DRM) spectral mask linearity and a flat gain response.

As an heterojunction bipolar transistor (HBT) monolithic microwave IC (MMIC), this PA device uses a high breakdown-voltage GaAs fab process, meeting the same ruggedness requirements as GSM cell phone handsets. The device also features good adjacent channel power ratio (ACPR) linearity, meeting cellular infrastructure standards.

Typically, a MAAP-007649-000100 operating at 900MHz delivers 19dB of gain, and 34dBm (P1dB). It exhibits 49dBm output (IP3).

In operation, the PA requires a single 7.5Vdc source, in addition to a 4.5V reference for its power-down pin and power control.

The MAAP-007649-000100 is also RoHS-compliant. It's available in 4mm 16-lead PQFN surface-mount packages. The MAAP-007649-000100 is available from stock, priced at less than Rs.226.60 ($5) a pop in quantities of 10,000.

- Alex Mendelsohn
eeProductCenter




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