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RFMD samples GaN power amplifier ICs

Posted: 01 Dec 2006     Print Version  Bookmark and Share

Keywords:RFDM  GaN  power amplifiers  WiMAX  PMR 

RF Micro Devices Inc. (RFMD) announced the introduction and sampling of GaN wideband power amplifier ICs to Tier 1 WiMAX, cellular base station and Public Mobile Radio (PMR) customers. The family achieves superior performance in gain, output power and efficiency across a broad range of frequencies as compared to currently available GaAs and silicon LDMOS products.

"Our GaN process technology positions RFMD to provide customers with the high-power, broadband solutions needed to meet growing customer demand for more cost-effective and more efficient deployment of next-generation wireless infrastructure," said Jeff Shealy, RFMD VP for infrastructure product group. "RFMD's GaN power ICs deliver a simple, single amplifier solution for wideband applications dependant on maximising power, bandwidth and efficiency."

The new family includes multiple parts: RF3821 (8W P1dB WiMAX PA, 2.3-2.7GHz), RF3823 (8W P1dB WiMAX PA, 3.3-3.8GHz), RF3822 (14W saturated power PMR PA, 100-1000MHz), and RF3820 (8W P1dB cellular PA, 1.8-2.2GHz).

The two WiMAX power amplifier ICs provide 29dBm linear output power with 2.5 per cent EVM and flat gain of 11dB across multiple bands. The cellular power amplifier IC provides 27dBm linear output power with -50dBc ACPR and flat gain of 13dB across DCS/PCS/W-CDMA frequency bands. The PMR power amplifier IC provides 14W to 12W saturated output power and flat gain of 11.5dB with PAE of 65 per cent mid band at 500MHz.

The designs operate on a 28V rail and include internal-matching elements to deliver a 50Ω interface over the band of operation and are packaged in a thermally enhanced AlN package for efficient heat removal.

RFMD anticipates production shipments of the GaN power amplifiers will commence in 2007.

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