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Chartered Semi's new solutions suit consumer, wireless apps

Posted: 13 Sep 2005     Print Version  Bookmark and Share

Keywords:chartered semiconductor  fpd driver  silicon germanium bicmos  sige bicmos  ultrawide band 

Chartered Semiconductor Mfg announced the availability of high-performance value-added solutions for advanced consumer and wireless products. Currently in prototyping, the additional solutions include a 0.18µm ultra-low leakage (ULL) high-voltage process for FPD drivers for mobile products; a 0.18µm and a 0.35µm silicon germanium (SiGe) BiCMOS processes for single-chip ultrawide band (uwb) communications and noise-sensitive TV tuners; and a 0.18µm and 0.25µm one-time programmable (OTP) solutions for RFID chips and microcontroller units (mcus).

"Our latest, advanced value-added solutions anticipate and address the technical opportunities for emerging technologies and products in the digital consumer and wireless communication space," said Kevin Meyer, VP of worldwide marketing and platform alliances at Chartered. "We are committed to innovating and extending our value-added solutions platform to be well-positioned to collaborate with our customers at the product development stage and support their product differentiation and volume ramp."

The new solutions are developed as plug-in modules on top of Chartered's baseline CMOS processes and leverages existing design infrastructure, therefore enabling designers to optimize performance and cost efficiencies, while realizing high yields in volume production, said the press release.

The 0.18µm ULL high-voltage process features a very competitive low-leakage transistor in the unit pico Ampere (pA) range optimized for emerging mobile applications, such as low-temperature poly-silicon (LTPS) thin-film transistor (TFT), OLED mobile display drivers and mobile power management. It is integrated with a single-poly, non-volatile memory fuse for analog and LCD module contrast trimming. Additionally, the process is supported by dual-gate and triple-gate oxide plug-in options; compact, low-power SRAM cell at below 4µm² for single-chip solutions; and complete third-party design enablement solutions to enable competitive time to market.

Chartered's 0.35µm high-performance SiGe BiCMOS process can achieve a peak fT greater than 50GHz and a peak fmax greater than 60GHz. Besides TV tuners, the process also provides a cost-effective solution for manufacturing the RF transceiver and power amplifier chips for cellular phones. Meanwhile, the 0.18µm SiGe BiCMOS process targets performance-driven and highly integrated wireless products. Both processes feature very high-density MIM capacitors of 4fF/µm² and deep trench isolation to enable noise isolation in noise-sensitive products.

In addition, Chartered offers 0.25µm and 0.18µm OTP solutions suited for multiple functions, such as code storage, firmware updates, data storage and fuse trimming in embedded systems. Bit cell sizes range from 5.2µm² to 1.8µm² with memory sizes ranging from 8 bits to a few Megabits. Using the OTP solutions, said the company, designers are able to simplify data coding, reduce design cycle time by using byte programming, and achieve fast access time of <40ns. Additionally, the OTP implementation minimizes overall cost of ownership through pass-through yield benefits derived from using proven baseline processes and enable die area efficiency as a minimal number of probe pads are required.

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