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90nm flash memory combines performance, density, low power

Posted: 22 Nov 2005     Print Version  Bookmark and Share

Intel Corp. recently announced it is shipping in volume what it touts as the industry's first 90nm multi-level cell (MLC) NOR flash memory device. The new Intel StrataFlash Cellular Memory (M18) delivers faster performance, higher density and lower power consumption than the previous 130nm version to meet the demand for feature-rich cellphones equipped with cameras, color screens, Web browsing and video.

"Flash memory is one of the driving technologies in enabling the next generation of cell phone applications," said Darin Billerbeck, VP and GM, Intel Flash Products Group. "The M18 delivers to cellular designers the unique combination of performance, density and low power required for today's phones."

According to the press release, the M18 offers the fastest read speeds in the industry, enabling the new flash memory to operate at the same bus frequency as next-generation cellular chipsetsup to 133MHz. With write speeds of up to 0.5MBps, the M18 supports 3-Mega pixel cameras and MPEG4 video. The M18 also consumes one-third the energy to program and about half the energy to erase than prior generation products, and offers the new Deep Power Down operation mode. Intel added that the M18 increases the NOR flash density reach, with single chip solutions of 256Mb and 512Mb, and standard stacked package solutions up to 1Gb.

To help designers speed integration and delivery of new handsets, Intel is providing the next generation of Intel Flash Data Integrator (Intel FDI) royalty-free software. Intel FDI v7.1 offers an open architecture for easy integration of a flash file system with real-time operating systems and three new features: mountable USB, multi-volume support and RAM buffer support.

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