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Memory/Storage  

Technical comparison of floating-gate reprogrammable non-volatile memories

Posted: 23 Aug 2001     Print Version  Bookmark and Share

Keywords:sst  eeprom  eprom  memory  reprogrammable eeprom 

This application note presents a comparison of the three major approaches to producing floating gate reprogrammable EEPROMs: the thin oxide stacked gate approach; the thin oxide two transistor cell; and the thick oxide split-gate cell patented by SST.

View the PDF document for more information.



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