Global Sources
EE Times-India
Stay in touch with EE Times India
EE Times-India > Memory/Storage

Technical comparison of floating-gate reprogrammable non-volatile memories

Posted: 23 Aug 2001     Print Version  Bookmark and Share

Keywords:sst  eeprom  eprom  memory  reprogrammable eeprom 

This application note presents a comparison of the three major approaches to producing floating gate reprogrammable EEPROMs: the thin oxide stacked gate approach; the thin oxide two transistor cell; and the thick oxide split-gate cell patented by SST.

View the PDF document for more information.

Comment on "Technical comparison of floating-gat..."
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.


Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

Back to Top