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Low-dislocation-density GaAs wafers grown by vertical gradient freeze process, suitable for mass production of semiconductor lasers

Posted: 20 Jun 2002     Print Version  Bookmark and Share

Keywords:vertical gradient freeze  vgf process  silicon wafer  laser diode 

This application note describes the use of the vertical gradient freeze process to develop silicon wafers suitable for the production of laser diodes.

View the PDF document for more information.

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