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SK Hynix begins ramp up of 3D NAND flash

Posted: 29 Jul 2015     Print Version  Bookmark and Share

Keywords:SK Hynix  3D NAND  flash  Samsung  Toshiba 

SK Hynix Inc. has announced that it will prepare for its first production volumes of 3D NAND flash memory in 3Q15. It joins the ranks of Samsung, Toshiba and Micron.

The part will be a 36-layer 128Gb NAND multilayer-cell (MLC) device. In addition the company said it would complete the design of a 48-layer triple-layer cell (TLC) in 2015 to be able to meet demand from the solid-state drive market in 2016. SK Hynix had announced a 24-layer NAND device as a prototype.

3D NAND flash

The announcement was made as part of SK Hynix's reporting on its financial results for 2Q15. The company made a net income of about $ 0.95 billion on revenue of $3.97 billion, which was YoY by 18 per cent.

Toshiba started sampling a 48-layer 128Gb NAND flash memory back in March 2015 while at the same time Micron Technology Inc. announced sampling of a 256Gb MLC version of 3D NAND with select partners. A 384Gb version are expected to be in full production at Micron in 4Q15.

Samsung was the early leader in mass production 3D NAND with an announcement in November 2014 of a 128Gb NAND flash memory that offers 3bit multi-level cells and has 32 layers of memory in the vertical direction. As such a step up in stacking and memory capacity could be expected from Samsung soon.

- Peter Clarke
  EE Times Europe





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