Global Sources
EE Times-India
Stay in touch with EE Times India
 
EE Times-India > Power/Alternative Energy
 
 
Power/Alternative Energy  

GaN transistor targets high-efficiency DC/DC conversion

Posted: 11 Dec 2014     Print Version  Bookmark and Share

Keywords:transistors  GaN  FETs  buck converters 

Efficient Power Conversion Corp. (EPC) has unleashed a monolithic half-bridge GaN transistor with a voltage rating of 60V. For a complete buck converter, the EPC2101 yields system efficiency that approaches 87 per cent at 14A, and over 82 per cent at 30A when switching at 500kHz and converting from 28V to 1V. The EPC2101 is geared for high-frequency DC/DC conversion.

By integrating two eGaN power FETs into a single device, interconnect inductances and the interstitial space needed on the PCB are eliminated, resulting in a 50 per cent reduction in board area occupied by the transistors.

The upper FET has a typical RDS(on) of 8.4mΩ, and the lower FET has a typical RDS(on) of 2mΩ. The high-side FET is approximately one-fourth the size of the low-side device to optimise DC/DC conversion in buck converters with a high VIN/VOUT ratio. The EPC2101 comes in a chip-scale package, and is 6.05mm x 2.3mm. The EPC9037 Development Board is 2in by 1.5in and contains one EPC2101 integrated half-bridge component using Texas Instruments' LM5113 gate driver, supply and bypass capacitors.

The EPC2101 monolithic half-bridge price for 1,000 units is $6.92 each, while the EPC9037 development boards are priced at $137.75 each. Both are available for delivery from Digi-Key.





Comment on "GaN transistor targets high-efficien..."
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
 
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

 

Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

 
Back to Top