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IIT Bombay, Synopsys to enable modelling of NBTI in FinFETs

Posted: 02 Jul 2014     Print Version  Bookmark and Share

Keywords:IIT Bombay  FinFETs  CMOS  NBTI 

Synopsys Inc. and the Indian Institute of Technology, Bombay have teamed up to advance the modelling of negative bias temperature instability (NBTI), a key reliability concern for advanced CMOS devices. This collaboration will enable leading semiconductor manufacturers to gain insight into NBTI degradation and develop methods to mitigate its effects on FinFETs at the 14nm node and beyond.

NBTI has become more critical with the introduction of high-k metal gate (HKMG) processes and is a dominant reliability concern for FinFET devices, contributing to the degradation of threshold voltage, current, transconductance and other electrical parameters.

IIT Bombay, Synopsys to enable modelling of NBTI in FinFETs

NBTI has become more critical with the introduction of HKMG processes and is a dominant reliability concern for FinFET devices.

"Our research over the years has helped identify the underlying physical mechanisms contributing to NBTI. We have developed both continuum and stochastic frameworks for predictive DC and AC NBTI modelling in planar transistors. Our collaboration with Synopsys and the implementation of these models in Synopsys' Sentaurus Device simulator will enable modeling of NBTI in FinFETs for the 14-nanometer node and beyond," said Souvik Mahapatra of IIT Bombay.

Through this collaboration, IIT Bombay will conduct experiments and measurements to characterise NBTI in FinFET devices. The resulting data will be used to enhance and calibrate physical NBTI models in Sentaurus Device, Synopsys' industry standard TCAD device simulator.

"As 14nm FinFET technology evolves from the development to production phase, many of our customers are concerned about device degradation and reliability caused by NBTI. The combination of IIT Bombay's proven expertise in NBTI characterisation and Synopsys' expertise in device modelling will allow us to build a stochastic model to address customer needs for simulating and analysing NBTI effects on FinFET devices," said Howard Ko, SVP and GM of the silicon engineering group at Synopsys.





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