Global Sources
EE Times-India
Stay in touch with EE Times India
 
EE Times-India > RF/Microwave
 
 
RF/Microwave  

RF power transistors geared for cellular base stations

Posted: 06 Jun 2014     Print Version  Bookmark and Share

Keywords:NXP Semiconductors  cellular base station  RF power transistor  power amplifier 

NXP Semiconductors N.V. has unleashed its ninth generation (Gen9) LDMOS RF power transistors aimed at wireless/cellular base stations. According to the company, the devices represent a further step-up in performance for LDMOS transistors, having shown up to five per cent more efficiency in Doherty applications.

The first Gen9 transistors are designed for Doherty power amplifiers, symmetric and asymmetric, and offer benchmark power densities in existing high-volume packages. The Gen9 technology is also optimised for operation at 3.4-3.8GHz in anticipation of these frequency bands being released on a global scale next year for use by mobile telecoms providers.

With 4G mobile data services now being rolled out globally, the Gen9 product family is specifically focused on compact, efficient and high-performance LTE base stations. Building on the excellent reputation already established by previous LDMOS generations, Gen9 claims to deliver unprecedented efficiencies and excellent linearisation capabilities for RF power amplifiers, at an industry-leading cost point, added the company.

The 150AV Gen9 device (BLC9G27LS-150AV) is sampling and several other transistors are being sampled to major OEMs.





Comment on "RF power transistors geared for cell..."
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
 
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

 

Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

 
Back to Top