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Vishay Intertech outs compact asymmetric dual MOSFETs

Posted: 21 Jan 2014     Print Version  Bookmark and Share

Keywords:Vishay Intertechnology  MOSFET  cloud computing  telecommunication  server 

Vishay Intertechnology has announced a 30V asymmetric dual TrenchFET power MOSFET in the PowerPAIR 3 x 3mm package using TrenchFET Gen IV technology. According to the company, the devices deliver 57 per cent lower on-resistance, up to 25 per cent higher power density and five per cent higher efficiency than previous-generation devices in this package size. The Vishay Siliconix SiZ340DT helps to save space and simplify the design of highly efficient synchronous buck converters by combining a high-side and low-side MOSFET in one compact package, added the company.

The TrenchFET Gen IV technology of the SiZ340DT uses a very high-density design to reduce on-resistance without significantly increasing the gate charge, minimizing conduction losses and reducing total power loss for higher power output. As a result, the low-side Channel 2 MOSFET of the SiZ340DT offers a low on-resistance of 5.1m? at a 10V gate drive and 7m? at 4.5V. The high-side Channel 1 MOSFET features on-resistance of 9.5m? at 10V and 13.7m? at 4.5V.

The device is optimized for synchronous buck designs in "cloud computing" infrastructures, servers, telecommunication equipment, and various client-side electronic devices and mobile computing applications. The intended DC/DC blocks include system auxiliary power rails in servers, computers, notebook computers, graphic cards, gaming consoles, storage arrays, telecom equipment, DC/DC bricks and POL converters. The SiZ340DT can also be used in DC/DC conversion circuitry that supplies power to FPGAs.

Vishay Siliconix SiZ340DT

In these applications, the device maintains a low gate charge of 5.6nC for the Channel 1 MOSFET and 10.1nC for Channel 2. The resulting low on-resistance times gate charge, a key figure of merit (FOM) for MOSFETs in DC/DC converter applications, reduces conduction and switching losses to improve total system efficiency. With higher efficiency, the SiZ340DT can run 30 per cent cooler than previous-generation devices at the same output load, or provide increased power density.

For typical DC/DC topologies with 10-15 A output current and an output voltage below 2V, the compact 3 x 3mm footprint area of the SiZ340DT saves up to 77 per cent PCB space compared with using discrete solutions, such as a PowerPAK 1212-8 MOSFET for the high-side and a PowerPAK SO-8 for the low side. Reducing switching losses, the device allows higher switching frequencies beyond 450kHz to shrink the PCB size, without sacrificing efficiency, by enabling the use of smaller inductors and capacitors. In addition, by providing higher performance than multiple paralleled previous-generation devices, the MOSFET can potentially reduce the overall component count and simplify designs.

The SiZ340DT is 100 per cent Rg- and UIS-tested, halogen-free according to the JEDEC JS709A definition, and compliant to RoHS Directive 2011/65/EU.

Samples and production quantities of the SiZ340DT are available with lead times of 14 to 16 weeks for large orders.

Link to datasheet: http://www.vishay.com/doc?62877 (SiZ340DT)





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