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Diode bridge features integrated IC with low loss MOSFET

Posted: 06 Jan 2014     Print Version  Bookmark and Share

Keywords:Microsemi  MOSFET  diode bridge  wireless LAN  small cell 

Microsemi Corp has unleashed the PD70224 IdealPoE diode bridge, a dual pack of MOSFET-based full-bridge rectifiers. According to the company, the device's low-RDS 0.16? N-channel MOSFETS allow for much higher overall efficiency and higher output power, particularly when used in powered devices for Power-over-Ethernet (PoE) and Power-over-HDBaseT (PoH) applications in the communications and enterprise markets including wireless LAN access points, small cells and small switches/routers.

Unlike similar solutions currently on the market, this highly integrated device eliminates the need to add additional external components such as controllers and field effect transistors (FETs), reducing overall system cost as well as board real estate, added the company.

Microsemi's PD70224 can support over 1A, making it the ideal choice not only for modern energy-saving two-pair applications compliant with IEEE802.3af and IEEE802.3at, but also for four-pair powered devices using Universal PoE (up to 51W) and PoH (up to 95W), stated the firm. The entire drive circuitry for driving the MOSFETs is on-chip, including a charge pump for driving the high-side N-channel MOSFETs. The total forward drop (bridge offset) introduced by the ideal bridge rectifier is only 192mV at 0.6A, compared to a standard bridge rectifier that typically presents 2,000mV of forward drop.

The device boasts a wide operating voltage range up to 57V and supports ambient temperature from -40°C to 85°C. The RoHS compliant device is available in a 40-pin package. The PD70224 ideal diode bridge devices are sampling now, with volume production beginning this month.





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