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Bipolar transistor boasts MOSFET-like efficiency

Posted: 05 Nov 2013     Print Version  Bookmark and Share

Keywords:STMicroelectronics  MOSFET  3STL2540  bipolar transistor  DC/DC converter 

STMicroelectronics has announced that 3STL2540 that the company said combines the cost and silicon-area efficiencies of a bipolar transistor with energy efficiency similar to MOSFETs of comparable rating. The firm added that the device affords designers a space-saving solution for cost-conscious power-management applications and DC/DC converters.

The 3STL2540 is a -40V/-5A PNP transistor capable of full saturation with maximum voltage drop of 200mV at only 10mA base current. It can achieve an equivalent on-resistance of only 90mΩ, which is close to the performance of comparable super logic-level MOSFETs, stated the firm.

At the heart of the device, ST's double-metal planar base island technology enables the 3STL2540 to maintain consistently high current gain (hFE) of at least 100 over a wide output-voltage range from 0.2-10V and a temperature range from -30°C to 150°C, offering the industry's lowest conduction losses for this type of device. The thermally efficient PowerFLAT package is only 0.6mm high with a 2mm x 2mm footprint enabling reliable, high-performance power circuitry within minimal PCB space.

The 3STL2540 is in volume production, and available from $0.30 in the PowerFLAT 2x2 package for orders over 1,000 pieces.





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