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750W GaN on SiC RF power transistor

Posted: 03 Oct 2013     Print Version  Bookmark and Share

Keywords:Microsemi  RF power transistor  collision avoidance system  MDSGN-750ELMV  secondary surveillance radar 

Microsemi Corp. has extended its family of RF power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology with a 750W RF transistor. The MDSGN-750ELMV delivers outstanding, highest power performance in a full range of air traffic control and collision avoidance equipment, stated the company. Applications include commercial secondary surveillance radar (SSR), which is used globally to interrogate and identify aircrafts in airport locales and regional centres within about a 200 mile range.

The MDSGN-750ELMV transistor claims to deliver unparalleled performance of 750W of peak power with 17dB of power gain and typical 70 per cent drain efficiency when operating at 1030/1090MHz to provide the most power in one single-ended device of its type covering this band.

In addition, the RF device is capable of handling the demanding commercial Mode-S ELM (extended length message) pulsing conditions for both the 1030MHz ground based interrogators and 1090MHz airborne transponders and can be used in the output stage of high performance ground. ELM makes air travel safer by facilitating the communication of shared weather and air traffic situational awareness information to aircrafts within a regional locale. It is also ideal for use in commercial air-to-air traffic alert and collision avoidance systems (TCAS) and in Identify Friend or Foe (IFF) systems, which are essential in protecting friendly aircrafts within a specific area.

GaN on SIC HEMT provide several advantages over alternative process technologies including higher power performance, BOM cost savings and a reduced device-size footprint.

According to Microsemi, the MDSGN-750ELMV features a single-ended design with simplified impedance matching, replacing lower power devices that require additional levels of combining. It also boasts the highest peak power and power gain for reduced system power stages and final stage combining. In addition, the single output stage pair provides 1.5kW peak output power with margin. Combining four output stage pairs delivers a full system >5kW peak output power.

The RF device touts 50V bias that allows use of existing power supply rail with reduced DC current demand, and flaunts extremely rugged performance that improves system yields. The amplifier size is 50 per cent smaller than devices built with silicon bipolar junction transistors (Si BJT) or laterally diffused metal oxide semiconductor (LDMOS) devices. The transistor likewise support over-temperature operation from -55°C to 85°C, detailed Microsemi.

In addition to RF components, Microsemi's commercial aviation product portfolio includes: FPGAs; TVS diodes; integrated standard and custom products; integrated circuits; power conditioning and management components and modules; application specific integrated circuits (ASICs); microwave devices and components; high-density memory products; custom semiconductor packaging; and integrated power distribution systems.

The MDSGN-750ELMV is offered in a single-ended package and is built with 100 per cent high-temperature gold (Au) metallisation and wires in a hermetically solder-sealed package.





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