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New research may improve future electronics

Posted: 09 Sep 2013     Print Version  Bookmark and Share

Keywords:Kansas State University  molybdenum disulphide  gold  transistors  sensors 

Indian-origin scientist at Kansas State University announced a discovery that has great potential to enhance electronic devices.

Vikas Berry, William H. Honstead professor of chemical engineering, and his team have studied a new three-atom-thick material—molybdenum disulfide—and found that manipulating it with gold atoms improves its electrical characteristics.

"The research may advance transistors, photodetectors, sensors and thermally conductive coatings," Berry said. "It could also produce ultrafast, ultrathin logic and plasmonics devices."

He focused on transistors based on molybdenum disulfide, or MoS2, a material made of three-atom-thick sheets and has recently shown to have transistor-rectification that is better than graphene, which is a single-atom-thick sheet of carbon atoms, the researcher said.

When Berry's team studied molybdenum disulfide's structure, they realised that the sulphur group on its surface had a strong chemistry with noble metals, including gold. By establishing a bond between molybdenum disulfide and gold nanostructures, they found that the bond acted as a highly coupled gate capacitor.

The team enhanced several transistor characteristics of molybdenum disulfide by manipulating it with gold nanomaterials.

"The spontaneous, highly capacitive, lattice-driven and thermally-controlled interfacing of noble metals on metal-dichalcogenide layers can be employed to regulate their carrier concentration, pseudo-mobility, transport-barriers and phonon-transport for future devices," Berry said.

The work may greatly improve future electronics, which will be ultrathin. The researchers have developed a way to reduce the power that is required to operate these ultrathin devices.

"The research will pave the way for atomically fusing layered heterostructures to leverage their capacitive interactions for next-generation electronics and photonics. For example, the gold nanoparticles can help launch 2-D plasmons on ultrathin materials, enabling their interference for plasmonic-logic devices."

The research also supports the current work on molybdenum disulfide-graphene-based electron-tunnelling transistors by providing a route for direct electrode attachment on a molybdenum disulfide tunnelling gate.

The researchers plan to create further complex nanoscale architectures on molybdenum disulfide to build logic devices and sensors.

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