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Fujitsu announces GaN power device

Posted: 15 Jul 2013     Print Version  Bookmark and Share

Keywords:Fujitsu Semiconductor  GaN power device  MB51T008A  gallium-nitride 

Fujitsu Semiconductor Ltd has unleashed a silicon substrate-based, gallium-nitride (GaN) power device that boasts a breakdown voltage of 150 V. The MB51T008A, which enables normally-off operations, is capable of achieving roughly one half the figure of merit (FOM) of silicon-based power devices with an equivalent breakdown voltage, touted the company.

The MB51T008A has a number of advantages, including: 1) on-state resistance of 13mΩ and total gate charge of 16nC, which enables roughly half the FOM of silicon-based power devices with an equivalent breakdown voltage; 2) minimal parasitic inductance and high-frequency operations through the use of WLCSP packaging; and 3) a proprietary gate design that enables normally-off operations. The device is geared for high-side switches and low-side switches in DC-DC converters used in power supplies for data communications equipment, industrial products and automobiles.

In addition, because it supports a higher switching frequency in power supply circuits, power supplies can achieve improvements in overall size and efficiency. Fujitsu plans to begin sample shipments in July 2013, with volume production scheduled to begin in 2014.





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