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Transistors in medium power load switch apps

Posted: 11 Jun 2013     Print Version  Bookmark and Share

Keywords:Breakthrough In Small Signal  BISS  load switch 

This application note describes different low VCEsat Breakthrough In Small Signal (BISS) transistors from NXP and other discrete semiconductor suppliers in a typical load switch application (20 V, up to 1.5 A) with respect to the parameters current gain hFE and collector-emitter saturation voltage VCEsat. Power losses will be discussed for different low VCEsat transistor types and a guideline will be evaluated to choose the right base drive.

View the PDF document for more information.

Originally published by NXP Semiconductors at www.nxp.com as "Low VCEsat transistors in medium power load switch applications".





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