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ST's 28nm FDSOI is production ready

Posted: 14 Dec 2012     Print Version  Bookmark and Share

Keywords:28nm  FD-SOI  CMOS  FinFET  NovaThor ModAp 

STMicroelectronics has announced the availability of its 28nm FD-SOI technology platform, which is now open for pre-production from its Crolles (France) 300mm manufacturing facility.

The FDSOI planar process is claimed to have advantages over other manufacturing process variants, such as bulk planar CMOS and FinFET CMOS in terms of trade-offs between performance, power consumption and manufacturability. ST was due to begin prototyping 28-nm FDSOI in July 2012 with 20-nm FDSOI due to be ready for prototyping in 3Q13. In addition, ST has a licensing agreement with foundry Globalfoundries Inc. to be a FDSOI production and to open up the process to more customers.

The announcement coincides with a workshop on fully-depleted-silicon-on-insulator (FD-SOI) technologies held by the FD-SOI Consortium in San Francisco.

The FD-SOI Technology Platform encompasses the availability of a feature-complete and silicon-verified Design Platform, including the full set of foundation libraries (std-cells, memory generators, I/Os), AMS IPs and high speed interfaces), and a design flow ideally suited for developing high-speed and energy-efficient devices.

"By bringing FD-SOI technology to manufacturing readiness, ST is again positioning itself as an innovator and leader in semiconductor technology development and manufacturing," said Jean-Marc Chery, executive vice president, general manager digital sector, and chief technology and manufacturing officer, STMicroelectronics. "Post-processing wafer testing has allowed us to prove the significant performance and power advantages of FD-SOI over conventional technologies, building a cost-effective industrial solution that is available from the 28nm node."

"Measurements on a multi-core sub-system in an ST-Ericsson NovaThor ModAp platform, with a maximum frequency exceeding 2.5Ghz and delivering 800MHz at 0.6V, are confirming expectations and demonstrating the great flexibility of the technology and the extended voltage range exploitable through DVFS (Dynamic Voltage and Frequency Scaling)," concluded Chery.





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