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Renesas outsources 40nm MCU production to TSMC

Posted: 29 May 2012     Print Version  Bookmark and Share

Keywords:40nm  MCU  eFlash  MONOS  CMOS 

Renesas Electronics has signed an agreement with TSMC under which it will outsource MCU production at 40nm and future technologies. TSMC is already making 90nm embedded flash (eFlash) MCUs for Renesas.

The new MCU platform, to be used in automotive and consumer electronics sectors, will combine Renesas' MONOS (Metal-Oxide-Nitride-Oxide-Silicon) technology with TSMC's advanced CMOS process technologies.

By making the MONOS process platform available to other semiconductor suppliers around the world (including fabless companies and IDMs), Renesas and TSMC aim to set up an ecosystem and further widen the customer base.

The companies plan to complete the new platform by the end of 2012, he added.

"In order for us to achieve further global growth, we are confident that TSMC will provide us with significant benefits in accelerated time-to-volume production and maximum flexibility in addressing the volatile fluctuation of the market demand," said Shinichi Iwamoto, senior vice president, Renesas Electronics Corporation.

"Based on what we have learned from the Great East Japan Earthquake last year, we have been accelerating the construction of the 'fab network' as part of the company's business continuity plan (BCP). By integrating both companies' world-leading technologies through this collaboration, we will construct a supply structure which secures consistent supply for our customers and also drive the market as a leading MCU supplier aiming to set up an ecosystem for MCUs," Iwamoto added.

At 40nm process, MCU products could achieve higher speed, lower power consumption and more than 50 per cent smaller die size compared to the current 90nm node. These features are particularly crucial for integrated MCU designs, where logic, memory, and all other system components are squeezed into a very small area.

MONOS is a structure in which each transistor in the flash cell consists of three layers—oxide, nitride, and oxide—on a silicon base, with a metal control gate at the top.





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