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Memory/Storage  

NAND flash boasts data transfer rate over 1GB/s

Posted: 09 Nov 2011     Print Version  Bookmark and Share

Keywords:NAND flash  memory channel  data transfer rate 

Mosaid Technologies Inc. unveils 256Gb HLNAND2 (HyperLink NAND) device claimed as the industry's fastest NAND flash memory device that requires only one memory channel to reach a data transfer rate on the host interface exceeding 1GB/s with a raw data rate of up to 800MB/s per channel, and 1600MB/s per channel with DuplexRW.

According to the company, the 256Gb HLNAND2 device operates at twice the speed of any other NAND flash device now on the market.

The flash memory device uses a high-speed, point-to-point ring topology, facilitating the development of SSDs with data transfer rates into the multiple Gigabyte-per-second range. In comparison, NAND flash interfaces based on a parallel bus structure are limited to transfer rates of 200-400MB/s, with only a few devices supported on each channel.

"HLNAND's point-to-point interface creates an extremely clean signalling environment with reduced loading, allowing developers to build SSDs with Terabyte-class capacity without data-rate degradation," noted Jin-Ki Kim, VP of R&D, Mosaid. "HLNAND's ring topology also eliminates the need for power hungry on-die terminations that plague variants of parallel-bus flash."

HLNAND2 has an 8bit, synchronous, DDR data bus but uses a source-synchronous clock and is capable of operating at up to 400MHz. Other features include flash interface speed closely matched to high-speed system interconnects such as PCIe generations 2 and 3. It has power saving features by automatic packet truncation and a built-in error detection code (EDC) in 'Command Packets' for the best reliability in packet protocol communication

The HLNAND2 flash memory device is a multi-chip package (MCP) comprised of a nine die stack—eight industry-standard NAND flash dies and one Mosaid proprietary ASIC interface chip. The MCP is packaged in a 100-ball ball grid array measuring 18x14mm.

The design supports either monolithic 32nm/2xnm Toggle Mode or legacy asynchronous NAND flash chips, evenly distributed across four banks. The interface chip contains the external high-speed HyperLink interface and controls each flash bank automatically and independently. The device also offers user configurable virtual pages for read operations with page depth choices of 2048B, 4096B, 8192B and a full page including extra bits.





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