Global Sources
EE Times-India
Stay in touch with EE Times India
 
EE Times-India > Controls/MCUs
 
 
Controls/MCUs  

Maximising FRAM write speed on MSP430FR573x

Posted: 21 Jul 2011     Print Version  Bookmark and Share

Keywords:FerroElectric RAM  FRAM  write speeds 

Non-volatile, low-power FerroElectric RAM (FRAM) is capable of extremely high speed write accesses. This application report discusses how to maximise FRAM write speeds specifically in the MSP430FR573x family using simple techniques. The document uses examples from bench tests performed on the MSP430FR5739 device and discusses trade-offs such as CPU clock frequency and block size and how they impact the FRAM write speed.

View the PDF document for more information.





Comment on "Maximising FRAM write speed on MSP43..."
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
 
Webinars

Seminars

Visit Asia Webinars to learn about the latest in technology and get practical design tips.

 

Go to top             Connect on Facebook      Follow us on Twitter      Follow us on Orkut

 
Back to Top