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Silicon FETs, LEDs integrated for optoelectronic ICs

Posted: 29 Mar 2011     Print Version  Bookmark and Share

Keywords:one-bit counter  optoelectronic IC  OEIC  GaPN  LEDs 

Toyohashi University of Technology researchers demonstrated silicon FETs integrated with LEDs produced using direct band gap compound semiconductors to make optoelectronic ICs (OEICs).

While silicon-based semiconductors dominate the microelectronics industry, silicon has an indirect band gap that limits its use for making photonic devices such as LEDs and lasers. Researchers have devised an alternative solution with the fabrication of a one-bit counter circuit optoelectronic IC (OEIC) with an optical output consisting of silicon FETs integrated with gallium phosphide nitride LEDs on a single monolithic chip.

One-bit counter

One-bit counter consisting of a p-MOSFET and GaPN light emitting diode

Akihiro Wakahara and his colleagues at Toyohashi Tech have achieved this with the fabrication of monolithic ICs using lattice matched Si/GaPN/Si heterostructures grown on silicon substrates in a dual chamber molecular beam epitaxy system. Notably, growth of the silicon capping layer at a high temperature of 850°C led to a dramatic reduction of the threshold voltage to -2.1V and an increase of the channel mobility of the p-MOSFET to 82cm2Vs. This improvement is attributed to a decrease in phosphorus incorporation during the growth of the capping layer.

The one-bit counter circuit fabricated using the n-Si/p-GaPN/n-GaPN/GaP/n-Si heterostructure exhibited normal operation, where red light emission from the input and output indicators was in synchronisation with the input and output logical voltages.





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