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DB-LSA system tailored for logic devices

Posted: 28 Dec 2010     Print Version  Bookmark and Share

Keywords:laser spike anneal system  manufacturing  logic devices 

Ultratech Inc. unveils the LSA100L, a dual-beam laser spike anneal system which promises within-die uniformity, layout-independent process results, and closed-loop wafer temperature control.

Designed for front-end-of-line (FEOL) and middle-of-line (MOL) applications, the LSA100L expands the company's LSA capabilities to include low-temperature processes such as nickel silicide formation. Leveraging the company's customisable Unity Platform, the system delivers within-die uniformity, layout-independent process results, and closed-loop wafer temperature control. There are multiple beta systems already in the field, and the production version will be available in Q1 2011.

In the company's previous LSA100A system, the wafer surface is heated by a single narrow CO2 laser beam from a substrate temperature of about 400�C to the peak annealing temperature in the range 1,100�C to 1,350�C. In the dual-beam LSA100L system, a second laser beam is added that is wider than the narrow CO2 beam. This second laser beam is used to locally preheat the wafer, which enables lower chuck temperatures required for MOL processes such as nickel silicide formation. Also, a new low-temperature measurement and control system has been developed, which extends the operating range to temperatures down to 400�C. For leading-edge logic nodes, the short time scale of millisecond annealing has been shown to minimise nickel silicide diffusion and diffusion-related yield loss, while the higher temperatures available from millisecond annealing have been shown to enhance device performance.

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