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FBAR duplexer targets 4G/LTE handsets

Posted: 19 Aug 2010     Print Version  Bookmark and Share

Keywords:LTE  duplexer  film bulk acoustic resonator  FBAR 

Avago Technologies presents the ACMD-6007, a 4G/LTE Band 7 duplexer as the latest member of its line of high isolation, 2mm x 2.5mm film bulk acoustic resonator (FBAR) duplexers for mobile handsets and data terminals. The ACMD-6007 FBAR duplexer enables manufacturers to build handsets for the emerging 4G/LTE standard that are optimised for voice QoS and battery life.

The device's 2.1dB maximum insertion loss in the transmit channel minimises current drain from the power amplifier, extending handset battery life and talk time. Receive channel insertion loss of 2.5dB improves receiver sensitivity and dynamic range offering better signal quality and an improved user experience.

The ACMD-6007 attenuates the transmit channel by 50dB minimum in the receive channel, reducing transmit-generated noise in the receive band. This cuts the need for interstage filters, making the handset less costly and freeing space that can be used for additional features.

The duplexer is designed for LTE Band 7 (2,500-2,570MHz uplink, 2,620-2,690MHz downlink). Avago's proprietary FBAR filter and patented Microcap wafer level silicon packaging technology produces an air mounted resonator with very high Q for sharp, low-loss filtering. The 33dBm transmit power handling capability of the ACMD-6007 supports the high output power levels used in mobile communications applications while adding virtually no distortion. Avago claims its bulk filter structure is much better at handling the transmit power levels found in handsets than SAW technology based filters, especially in the higher frequency bands.

The device is RoHS 6 compliant, halogen free, and Tetrabromobisphenol A free. It is available in an advanced Microcap bonded-wafer chipscale package measuring 2mm x 2.5mm x 0.95mm, priced at Rs.93.47 ($1.99) each in 10,000 piece quantities. Samples and production quantities are available now.





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