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Non-volatile SRAM (nvSRAM) basics

Posted: 15 Jul 2010     Print Version  Bookmark and Share

Keywords:nvSRAM basic operations  4Mbit nvSRAM  QuantumTrap technology 

Memories that offer a combination of SRAM features along with non-volatility have several advantages in a system. Cypress offers a family of high speed, high performance non-volatile SRAM (nvSRAM) products that combine the performance characteristics of a high-speed SRAM with the reliability of QuantumTrap non-volatile cell. The data is retained in the non-volatile elements that are integrated with each SRAM cell. A STORE operation stores the SRAM data to the non-volatile cells and a RECALL operation restores the non-volatile data to the SRAM array.

Cypress nvSRAMs ensure secure storage of data by automatically storing the SRAM data to the non-volatile cells on power down using charge from a capacitor. The non-volatile Shadow EEPROM elements incorporate the SONOS QuantumTrap technology that guarantees non-volatility for a minimum of 20 years at the maximum operating temperature. Cypress nvSRAMs do not use batteries or any other energy sources to retain data.

This application note describes the nvSRAM basic operations. The 4Mbit nvSRAM in 0.13µm SONOS QuantumTrap technology is also discussed here. The same descriptions apply to other Cypress nvSRAM parts.

View the PDF document for more information.





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