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Organic ICs close performance gap with silicon

Posted: 29 Jun 2010     Print Version  Bookmark and Share

Keywords:organic semiconductor  silicon chip  nanoscale 

Polymers created at a resolution of 5nm nanometers by copying the crystalline template of inorganic copper.

McGill University researchers claim a breakthrough that could disrupt the dominance of silicon as low-cost organic semiconductors close the performance gap.

Organic semiconductors offer easier low-temperature processing than silicon, resulting in lower cost semiconductors with highly tunable properties. Unfortunately, the poor carrier mobility of organic materials makes their performance characteristics lag behind traditional inorganic semiconductors by a thousand times or more.

The researchers demonstrated a method of endowing organic semiconductors with the performance characteristics of inorganic materials by copying their highly ordered nanoscale structure with bottom-up self-assembly techniques.

"What we show in this work is that we can take a crystalline that is perfectly ordered inorganic material—here single crystal copper—and translate its order into that of an organic layer," said McGill professor Dmitrii Perepichkal, who performed the work with professor Federico Rosei at the Institut national de la recherche scientifique. "Specifically, we demonstrate perfectly ordered arrays of one of the most important organic conducting polymer, PEDOT [polyethylenedioxythiophene]."


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