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40nm process 4Gbit DDR3 ups server memory

Posted: 02 Mar 2010     Print Version  Bookmark and Share

Keywords:4Gbit DDR3  DRAM  memory 

Samsung 4Gbit DDR

Samsung Electronics Co. Ltd has begun mass production of a 4Gbit DDR3 devices using 40nm process technology that are optimised to enhance energy-efficiency ratings for servers.

Dong-Soo Jun, executive VP of memory marketing at Samsung, described the memory as an ultra low power Green Memory, claiming it had been optimised to enhance energy-efficiency ratings for servers seeking to comply with or exceed new Energy Star power consumption specifications.

Production of the 4Gbit DDR3 raises the amount of memory for use in servers to 32Gbye per module, which is twice the maximum density achieved with modules based on 2Gbit components.

With the start of volume 4Gbit DDR3 production, Samsung plans to migrate more than 90 per cent of its DDR DRAM production to 40nm process technologies.

Today, servers are equipped with an average of six registered DIMMs (RDIMMs) sockets per CPU, with which up to a 96GBs of DRAM capacity can be accommodated. A module based on 60nm 1Gbit DDR2 components consumes 210W, Samsung said, while a 40nm 2Gbit DDR3-based module consumes 55 watts. The 40nm 4Gbit DDR3-based module consumes 36W.

The 4Gbit DDR3 supports both 1.5V and 1.35V specifications. Available memory modules include 16- and 32GB RDIMMs and 8GB SoDIMMs with a 1.6Gbps data transmission.

- Peter Clarke
EE Times





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