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Guide to using ferroelectric RAM

Posted: 06 Jul 2009     Print Version  Bookmark and Share

Keywords:Ferroelectric random access memory  non-volatile  EEPROM 

Ferroelectric random access memory (FRAM) is a non-volatile memory. FRAM has significant technical advantages that enable solutions not possible with other memory technology. The underlying molecular structure of an FRAM memory cell is shown in this document. When an electric field is applied across the ferroelctric crystal, the central atom moves in the direction of the applied field.

The polarity of this atom remains when the electric field is removed, preserving the data within the memory without the need for periodic refresh. Understanding the three principle benefits of FRAM enables an electronics engineer to achieve a more efficient and superior design:

No delay write—FRAM writes so quickly that there is no need to wait for the write to complete. Typical write speed for FRAM is around 55 nanoseconds as compared to the much slower 5 milliseconds write speed for EEPROM.

Virtually unlimited endurance—FRAM can withstand 1E14 (100-trillion) read/write cycles, making it virtually impossible to wear out.

Low power—FRAM requires much less power to perform writes. For example, erasing and writing 64kbits of data in an FRAM consumes 1/60th the power of that used by an EEPROM and 1/400th that used by a serial flash.

View the PDF document for more information.





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